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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Read AC Characteristics
Read AC Characteristics
Table 29: Read AC Characteristics
Symbol
Parameter
Address valid to next address valid
Legacy
t RC
JEDEC
t AVAV
Condition
CE# = V IL ,
Package
Fortified BGA
Min
100
Max
–
Unit
ns
Notes
OE# = V IL
TSOP
110
–
ns
Address valid to output valid
t ACC
t AVQV
CE# = V IL ,
Fortified BGA
–
100
ns
OE# = V IL
TSOP
–
110
ns
Address valid to output valid
(page)
t PAGE
t AVQV1
CE# = V IL ,
OE# = V IL
Fortified BGA
TSOP
–
–
25
25
ns
ns
CE# LOW to output transition
t LZ
t ELQX
OE# = V IL
Fortified BGA
0
–
ns
1
TSOP
0
–
ns
1
CE# LOW to output valid
t E
t ELQV
OE# = V IL
Fortified BGA
–
100
ns
TSOP
–
110
ns
OE# LOW to output transition
t OLZ
t GLQX
CE# = V IL
Fortified BGA
0
–
ns
1
TSOP
0
–
ns
1
OE# LOW to output valid
t OE
t GLQV
CE# = V IL
Fortified BGA
–
25
ns
TSOP
–
25
ns
CE# HIGH to output High-Z
t HZ
t EHQZ
OE# = V IL
Fortified BGA
–
20
ns
1
TSOP
–
20
ns
1
OE# HIGH to output High-Z
t DF
t GHQZ
CE# = V IL
Fortified BGA
–
15
ns
1
TSOP
–
15
ns
1
CE#, OE#, or address transition to
output transition
CE# to BYTE# LOW
t OH
t ELFL
t EHQX,
t GHQX,
t AXQX
t ELBL
–
–
Fortified BGA
TSOP
Fortified BGA
0
0
–
–
–
10
ns
ns
ns
TSOP
–
10
ns
CE# to BYTE# HIGH
t ELFH
t ELBH
–
Fortified BGA
–
10
ns
TSOP
–
10
ns
BYTE# LOW to output valid
t FLQV
t BLQV
–
Fortified BGA
–
1
μs
TSOP
–
1
μs
BYTE# HIGH to output valid
t FHQV
t BHQV
–
Fortified BGA
–
1
μs
Note:
1. Sampled only; not 100% tested.
TSOP
–
1
μs
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
59
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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